VS-HFA04SD60SHM3 Datasheet, PDF (1/7 Pages) Vishay Siliconix – Ultrasoft recovery

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VS-HFA04SD60SHM3
Vishay Semiconductors
HEXFRED^®,
Ultrafast Soft Recovery Diode, 4 A
TO-252AA (D-PAK)
2, 4
1
N/C
3
Anode
PRODUCT SUMMARY
Package
I_F(AV)
V_R
V_F at I_F
t_rr typ.
T_J max.
Diode variation
TO-252AA (D-PAK)
4A
600 V
1.4 V
17 ns
150 °C
Single die
FEATURES
• Ultrafast recovery time
• Ultrasoft recovery
• Very low I_RRM
• Very low Q_rr
• Guaranteed avalanche
• Specified at operating temperature
• AEC-Q101 qualified
• Meets JESD 201 class 2 whisker test
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION / APPLICATIONS
These diodes are optimized to reduce losses and EMI / RFI
in high frequency power conditioning systems. The softness
of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for
freewheeling, flyback, power converters, motor drives, and
other applications where high speed and reduced switching
losses are design requirements.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Repetitive peak forward current
Maximum power dissipation
Operating junction and storage temperatures
SYMBOL
V_RRM
I_F(AV)
I_FSM
I_FRM
P_D
T_J, T_Stg
TEST CONDITIONS
T_C = 100 °C
T_C = 116 °C
T_C = 100 °C
VALUES
600
4
25
16
10
-55 to +150
UNITS
V
A
W
°C
Revision: 15-Jul-15
1
Document Number: 94756
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000