VS-HFA04SD60S-M3 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Ultrasoft recovery

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VS-HFA04SD60S-M3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_C = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
I_F = 1.0 A, dI_F/dt = 200 A/μA, V_R = 30 V
-
17
t_rr
T_J = 25 °C
-
28
T_J = 125 °C
-
38
T_J = 25 °C
-
2.9
Peak recovery current
I_RRM
T_J = 125 °C
I_F = 4 A
-
3.7
dI_F/dt = 200 A/μs
Reverse recovery charge
T_J = 25 °C
Q_rr
V_R = 200 V
-
40
T_J = 125 °C
-
70
Rate of fall of recovery current dI_(rec)M/dt
T_J = 25 °C
T_J = 125 °C
-
280
-
235
MAX.
-
42
57
5.2
6.7
60
105
-
-
UNITS
ns
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
T_J, T_Stg
Thermal resistance,
junction to case
R_thJC
Thermal resistance,
junction to ambient
R_thJA
Typical socket mount
Weight
Mounting torque
Marking device
Case style TO-252AA (D-PAK)
MIN.
-55
-
-
-
-
6.0
(5.0)
TYP.
-
MAX.
150
-
5.0
-
80
2.0
-
0.07
-
12
-
(10)
HFA04SD60S
UNITS
°C
°C/W
g
oz.
kgf · cm
(lbf ⋅ in)
Revision: 10-Jul-15
2
Document Number: 93473
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