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VS-HFA04SD60S-M3 Datasheet, PDF (1/8 Pages) Vishay Siliconix – Ultrasoft recovery
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VS-HFA04SD60S-M3
Vishay Semiconductors
HEXFRED®,
Ultrafast Soft Recovery Diode, 4 A
TDO-P-A25K2A(TAO-(2D5-P2AAK)
2, 4
1
N/C
3
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr typ.
TJ max.
Diode variation
TO-252AA (D-PAK)
4A
600 V
1.4 V
17 ns
150 °C
Single die
FEATURES
• Ultrafast recovery time
• Ultrasoft recovery
• Very low IRRM
• Very low Qrr
• Guaranteed avalanche
• Specified at operating temperature
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION / APPLICATIONS
These diodes are optimized to reduce losses and EMI / RFI
in high frequency power conditioning systems. The softness
of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for
freewheeling, flyback, power converters, motor drives, and
other applications where high speed and reduced switching
losses are design requirements.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Repetitive peak forward current
Maximum power dissipation
Operating junction and storage temperatures
SYMBOL
VRRM
IF(AV)
IFSM
IFRM
PD
TJ, TStg
TEST CONDITIONS
TC = 100 °C
TC = 116 °C
TC = 100 °C
VALUES
600
4
25
16
10
-55 to +150
UNITS
V
A
W
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA
600
IF = 4 A
-
Forward voltage
See fig. 1
VF
IF = 8 A
-
IF = 4 A, TJ = 125 °C
-
Maximum reverse
leakage current
IR
VR = VR rated
TJ = 125 °C, VR = 0.8 x VR rated
-
-
Junction capacitance
CT
VR = 200 V
-
Series inductance
LS
Measured lead to lead 5 mm from package body
-
TYP.
-
1.5
1.8
1.4
0.17
44
4
8.0
MAX.
-
1.8
2.2
1.7
3.0
300
8
-
UNITS
V
μA
pF
nH
Revision: 10-Jul-15
1
Document Number: 93473
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000