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VS-FCSP0530ETR Datasheet, PDF (2/6 Pages) Vishay Siliconix – Supplied tested and on tape and reel
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VS-FCSP0530ETR
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
at TJ = 25 °C
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
50 % duty cycle at TPCB = 133 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and
with rated VRRM
applied
TJ = 25 °C, IAS = 2.0 A, L = 5.0 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
0.5
190
10
5
0.5
UNITS
A
mJ
A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
IRM (1)
Maximum junction capacitance
Maximum voltage rate of charge
CT
dV/dt
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
TEST CONDITIONS
0.5 A
1A
TJ = 25 °C
0.5 A
1A
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Rated VR
TYP.
0.40
0.45
0.29
0.36
10
5
-
-
MAX.
0.44
0.49
0.33
0.39
50
15
90
10 000
UNITS
V
μA
mA
pF
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ (1), TStg
Typical thermal resistance,
junction to PCB
RthJL (2)
DC operation
Typical thermal resistance,
junction to ambient
RthJA (2)
TEST CONDITIONS
Notes
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
(2) Mounted on dual sided 0.58" square FR4 PCB with 0.2 square inches of 1 oz. top copper area
VALUES
- 55 to 150
35
150
UNITS
°C
°C/W
Revision: 04-Jul-11
2
Document Number: 93429
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000