VS-ETX1506S-M3 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Low forward voltage drop

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VS-ETX1506S-M3, VS-ETX1506-1-M3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
I_F = 1 A, dI_F/dt = 100 A/μs, V_R = 30 V
-
17
Reverse recovery time
I_F = 15 A, dI_F/dt = 100 A/μs, V_R = 30 V
-
18
t_rr
T_J = 25 °C
-
20
Peak recovery current
Reverse recovery charge
Reverse recovery time
Peak recovery current
Reverse recovery charge
T_J = 125 °C
-
45
I_RRM
T_J = 25 °C
I_F = 15 A
-
2.7
dI_F/dt = 200 A/μs
T_J = 125 °C
V_R = 390 V
-
5.5
T_J = 25 °C
Q_rr
T_J = 125 °C
-
26
-
130
t_rr
I_F = 15 A
-
32
I_RRM
T_J = 125 °C
dI_F/dt = 800 A/μs
-
17
Q_rr
V_R = 390 V
-
290
MAX.
23
30
-
-
-
-
-
-
-
-
-
UNITS
ns
A
nC
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
T_J, T_Stg
R_thJC
R_thJA
R_thCS
Typical socket mount
Mounting surface, flat, smooth and
greased
Weight
Mounting torque
Marking device
Case style D²PAK
Case style TO-262
MIN.
-65
-
-
-
-
-
6
(5)
TYP.
-
MAX.
175
1.3
1.51
-
70
0.5
-
2.0
-
0.07
-
-
12
(10)
ETX1506S
ETX1506-1
UNITS
°C
°C/W
g
oz.
kgf · cm
(lbf · in)
100
T_J = 175 °C
10
T_J = 150 °C
T_J = 25 °C
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_FM - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
1000
100
10
1
0.1
0.01
175 °C
150 °C
125 °C
100 °C
75 °C
50 °C
25 °C
0.001
100
200
300 400
500 600
Reverse Voltage - V_R (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 09-Jul-15
2
Document Number: 93594
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