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VS-ETX1506S-M3 Datasheet, PDF (1/8 Pages) Vishay Siliconix – Low forward voltage drop
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VS-ETX1506S-M3, VS-ETX1506-1-M3
Vishay Semiconductors
Hyperfast Rectifier, 15 A FRED Pt®
TO-263AB (D2PAK)
Base
cathode
2
TO-262AA
2
FEATURES
• Hyperfast recovery time, extremely low Qrr
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Designed and qualified according to
JEDEC®-JESD 47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
1
N/C
3
Anode
VS-ETX1506S-M3
1
3
N/C
Anode
VS-ETX1506-1-M3
PRODUCT SUMMARY
Package
TO-263AB (D2PAK), TO-262AA
IF(AV)
VR
VF at IF
trr (typ.)
TJ max.
Diode variation
15 A
600 V
1.55 V
18 ns
175 °C
Single die
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recover time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC Boost stage in
the AC/DC section of SMPS, inverters or as freewheeling
diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.



ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Repetitive peak reverse voltage
VRRM
Average rectified forward current
IF(AV)
Non-repetitive peak surge current
Operating junction and storage
temperatures
IFSM
TJ, TStg
TEST CONDITIONS
TC = 127 °C
TC = 25 °C
MAX.
600
15
120
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA
600
IF = 15 A
-
Forward voltage
VF
IF = 15 A, TJ = 150 °C
-
VR = VR rated
-
Reverse leakage current
IR
TJ = 150 °C, VR = VR rated
-
Junction capacitance
CT
VR = 600 V
-
Series inductance
LS
Measured lead to lead 5 mm from package body
-
TYP.
-
2.5
1.55
0.02
40
12
8.0
MAX.
-
3.4
2
36
250
-
-
UNITS
V
μA
pF
nH
Revision: 09-Jul-15
1
Document Number: 93594
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000