VS-ETU1506S-M3 Datasheet, PDF (2/9 Pages) Vishay Siliconix – Ultrafast recovery time

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VS-ETU1506S-M3, VS-ETU1506-1-M3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
Reverse recovery time
Peak recovery current
Reverse recovery charge
I_F = 1 A, dI_F/dt = 100 A/μs, V_R = 30 V
-
24
I_F = 15 A, dI_F/dt = 100 A/μs, V_R = 30 V
-
36
t_rr
T_J = 25 °C
-
40
T_J = 125 °C
-
87
I_RRM
T_J = 25 °C
I_F = 15 A
-
dI_F/dt = 200 A/μs
5
T_J = 125 °C
V_R = 390 V
-
9.0
T_J = 25 °C
Q_rr
T_J = 125 °C
-
107
-
430
t_rr
I_F = 15 A
-
53
I_RRM
T_J = 125 °C
dI_F/dt = 800 A/μs
-
25
Q_rr
V_R = 390 V
-
730
MAX.
28
47
-
-
-
-
-
-
-
-
-
UNITS
ns
A
C
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
T_J, T_Stg
R_thJC
R_thJA
R_thCS
Typical socket mount
Mounting surface, flat, smooth and
greased
Weight
Mounting torque
Marking device
Case style D²PAK
Case style TO-262
MIN.
-65
-
-
-
-
-
6
(5)
TYP.
-
MAX.
175
UNITS
°C
1.3
1.51
°C/W
-
70
0.5
-
2.0
-
0.07
-
-
12
(10)
ETU1506S
ETU1506-1
g
oz.
kgf · cm
(lbf · in)
Revision: 09-Jul-15
2
Document Number: 93590
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