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VS-ETU1506S-M3 Datasheet, PDF (1/9 Pages) Vishay Siliconix – Ultrafast recovery time
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VS-ETU1506S-M3, VS-ETU1506-1-M3
Vishay Semiconductors
Ultrafast Rectifier, 15 A FRED Pt®
TO-263AB (D2PAK)
Base
cathode
2
TO-262AA
2
FEATURES
• Low forward voltage drop
• Ultrafast recovery time
• 175 °C operating junction temperature
• Low leakage current
• Designed and qualified according to
JEDEC®-JESD 47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
1
N/C
3
Anode
VS-ETU1506S-M3
1
3
N/C
Anode
VS-ETU1506-1-M3
PRODUCT SUMMARY
Package
TO-263AB (D2PAK), TO-262AA
IF(AV)
VR
VF at IF
trr (typ.)
TJ max.
Diode variation
15 A
600 V
1.1 V
24 ns
175 °C
Single die
DESCRIPTION
State of the art, ultralow VF, soft-switching ultrafast rectifiers
optimized for Discontinuous (Critical) Mode (DCM) Power
Factor Correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimized the switching losses
and reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
APPLICATIONS
AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PC, TV and
monitor, games units, and DVD AC/DC power supplies.

ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
VRRM
IF(AV)
IFSM
TJ, TStg
TEST CONDITIONS
TC = 143 °C
TC = 25 °C
MAX.
600
15
160
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA
600
IF = 15 A
-
Forward voltage
VF
IF = 15 A, TJ = 150 °C
-
VR = VR rated
-
Reverse leakage current
IR
TJ = 150 °C, VR = VR rated
-
Junction capacitance
CT
VR = 600 V
-
Series inductance
LS
Measured lead to lead 5 mm from package body
-
TYP.
-
1.35
1.1
0.01
20
12
8.0
MAX.
-
1.9
1.3
15
200
-
-
UNITS
V
μA
pF
nH
Revision: 09-Jul-15
1
Document Number: 93590
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000