VS-ETH3006SHM3 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Low leakage current

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VS-ETH3006SHM3, VS-ETH3006-1HM3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
I_F = 1 A, dI_F/dt = 50 A/μs, V_R = 30 V
-
26
t_rr
T_J = 25 °C
-
26
T_J = 125 °C
-
70
T_J = 25 °C
I_F = 30 A
-
3.5
I_RRM
dI_F/dt = 200 A/μs
T_J = 125 °C
V_R = 200 V
-
7.6
T_J = 25 °C
Q_rr
T_J = 125 °C
-
50
-
280
MAX.
35
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
T_J, T_Stg
R_thJC
R_thJA
R_thCS
Typical socket mount
Mounting surface, flat, smooth and
greased
Weight
Mounting torque
Marking device
Case style TO-263AB (D²PAK)
Case style TO-262AA
MIN.
-65
-
-
-
-
-
6
(5)
TYP.
-
MAX.
175
UNITS
°C
0.95
1.4
°C/W
-
70
0.5
-
2.0
-
0.07
-
-
12
(10)
ETH3006SH
ETH3006-1H
g
oz.
kgf · cm
(lbf · in)
Revision: 10-Jul-15
2
Document Number: 94425
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