VS-ETH3006SHM3 Datasheet, PDF (1/7 Pages) Vishay Siliconix – Low leakage current

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VS-ETH3006SHM3, VS-ETH3006-1HM3
Vishay Semiconductors
Hyperfast Rectifier, 30 A FRED Pt^®
TO-263AB (D²PAK)
Base
cathode
2
TO-262AA
2
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• AEC-Q101 qualified, meets JESD 201 class 1A
whisker test
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
1
N/C
3
Anode
VS-ETH3006SHM3
1
3
N/C
Anode
VS-ETH3006-1HM3
PRODUCT SUMMARY
Package
TO-263AB (D²PAK), TO-262AA
I_F(AV)
V_R
V_F at I_F
t_rr (typ.)
T_J max.
Diode variation
30 A
600 V
1.4 V
27 ns
175 °C
Single die
DESCRIPTION / APPLICATIONS
Hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop, hyperfast recovery
time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC Boost stage in
the AC/DC section of SMPS, inverters or as freewheeling
diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage
temperatures
V_RRM
I_F(AV)
I_FSM
T_J, T_Stg
TEST CONDITIONS
T_C = 95 °C
T_C = 25 °C
MAX.
600
30
180
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
V_BR,
V_R
I_R = 100 μA
600
I_F = 30 A
-
Forward voltage
V_F
I_F = 30 A, T_J = 150 °C
-
V_R = V_R rated
-
Reverse leakage current
I_R
T_J = 150 °C, V_R = V_R rated
-
Junction capacitance
C_T
V_R = 600 V
-
Series inductance
L_S
Measured lead to lead 5 mm from package body
-
TYP.
-
2.0
1.4
0.02
50
20
8.0
MAX.
-
2.65
1.8
30
300
-
-
UNITS
V
μA
pF
nH
Revision: 10-Jul-15
1
Document Number: 94425
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000