VS-ETH3006-M3 Datasheet, PDF (2/9 Pages) Vishay Siliconix – Hyperfast Rectifier, 30 A FRED Pt

VS-ETH3006-M3, VS-ETH3006FP-M3
Vishay Semiconductors ^{Hyperfast Rectifier, 30 A FRED Pt®}
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
I_F = 1 A, dI_F/dt = 50 A/μs, V_R = 30 V
-
26
t_rr
T_J = 25 °C
-
26
Peak recovery current
Reverse recovery charge
T_J = 125 °C
-
70
T_J = 25 °C
I_F = 30 A
-
3.5
I_RRM
dI_F/dt = 200 A/μs
T_J = 125 °C
V_R = 200 V
-
7.6
T_J = 25 °C
Q_rr
T_J = 125 °C
-
50
-
280
MAX.
35
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
T_J, T_Stg
Thermal resistance,
junction to case
FULL-PAK
R_thJC
Thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
R_thJA
R_thCS
Typical socket mount
Mounting surface, flat, smooth and
greased
Weight
Mounting torque
Marking device
Case style 2L TO-220AC
Case style 2L TO-220 FULL-PAK
MIN.
- 65
-
-
-
-
-
-
6
(5)
TYP.
-
0.84
3.2
-
MAX.
175
1.3
3.8
70
0.5
-
2
-
0.07
-
12
-
(10)
ETH3006
ETH3006FP
UNITS
°C
°C/W
g
oz.
kgf · cm
(lbf · in)
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 93523
[e-mail], [e-mail], [e-mail]
Revision: 18-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000