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VS-ETH3006-M3 Datasheet, PDF (1/9 Pages) Vishay Siliconix – Hyperfast Rectifier, 30 A FRED Pt
VS-ETH3006-M3, VS-ETH3006FP-M3
Vishay Semiconductors
Hyperfast Rectifier, 30 A FRED Pt®
2L TO-220AC
Base
cathode
2
2L TO-220 FULL-PAK
1
Cathode
3
Anode
VS-ETH3006-M3
1
Cathode
2
Anode
VS-ETH3006FP-M3
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr (typ.)
TJ max.
Diode variation
2L TO-220AC, 2L TO-220FP
30 A
600 V
2.65 V
27 ns
175 °C
Single die
FEATURES
• Hyperfast soft recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Fully isolated package (VINS = 2500 VRMS)
• True 2 pin package
• Compliant to RoHS Directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21 definition
• Designed and qualified according to JEDEC-JESD47
DESCRIPTION/APPLICATIONS
Hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop, hyperfast recovery
time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current in DC
FULL-PAK
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
VRRM
IF(AV)
IFSM
TJ, TStg
TEST CONDITIONS
TC = 131 °C
TC = 51 °C
TJ = 25 °C
VALUES
600
30
180
- 65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA
Forward voltage
IF = 30 A
VF
IF = 30 A, TJ = 150 °C
Reverse leakage current
VR = VR rated
IR
TJ = 150 °C, VR = VR rated
Junction capacitance
CT
VR = 600 V
Series inductance
LS
Measured lead to lead 5 mm from package body
MIN.
600
-
-
-
-
-
-
TYP.
-
2.0
1.4
0.02
50
20
8
MAX. UNITS
-
2.65
V
1.8
30
μA
300
-
pF
-
nH
Document Number: 93523 For technical questions within your region, please contact one of the following:
Revision: 18-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000