VS-8ETU04SPBF Datasheet, PDF (2/9 Pages) Vishay Siliconix – Ultrafast Rectifier, 8 A FRED Pt

www.vishay.com
VS-8ETU04SPbF, VS-8ETU04-1PbF
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
I_F = 1.0 A, dI_F/dt = 50 A/μs, V_R = 30 V
-
35
t_rr
T_J = 25 °C
-
43
I_RRM
Q_rr
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
-
67
I_F = 8 A
-
2.8
dI_F/dt = 200 A/μs
V_R = 200 V
-
6.3
-
60
-
210
MAX.
60
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage 
temperature range
T_J, T_Stg
Thermal resistance, junction to case
R_thJC
Thermal resistance, junction to ambient
Thermal resistance, case to heatsink
R_thJA
R_thCS
Typical socket mount
Mounting surface, flat, smooth
and greased
Weight
Mounting torque
Marking device
Case style TO-263AB (D²PAK)
Case style TO-262
MIN.
-65
-
-
-
-
-
6.0
(5.0)
TYP. MAX. UNITS
-
175
°C
1.8
2.0
-
50
°C/W
0.5
-
2.0
-
0.07
-
12
-
(10)
8ETU04S
8ETU04-1
g
oz.
kgf · cm
(lbf · in)
Revision: 10-Jul-15
2
Document Number: 94031
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000