VS-8ETU04SPBF Datasheet, PDF (1/9 Pages) Vishay Siliconix – Ultrafast Rectifier, 8 A FRED Pt

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VS-8ETU04SPbF, VS-8ETU04-1PbF
Vishay Semiconductors
Ultrafast Rectifier, 8 A FRED Pt^®
TO-263AB (D²PAK)
Base
cathode
2
TO-262AA
2
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
1
3
N/C
Anode
VS-8ETU04SPbF
1
N/C
3
Anode
VS-8ETU04-1PbF
PRODUCT SUMMARY
Package
TO-263AB (D²PAK), TO-262AA
I_F(AV)
V_R
V_F at I_F
t_rr typ.
T_J max.
Diode variation
8A
400 V
0.94 V
35 ns
175 °C
Single die
DESCRIPTION / APPLICATIONS
Vishay Semiconductors FRED Pt^® series are the state of the
art ultrafast recovery rectifiers specifically designed with
optimized performance of forward voltage drop and ultrafast
recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Repetitive peak forward current
Operating junction and storage temperatures
SYMBOL
V_RRM
I_F(AV)
I_FSM
I_FRM
T_J, T_Stg
TEST CONDITIONS
T_C = 155 °C
T_C = 25 °C
MAX.
400
8
100
16
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Breakdown voltage,
blocking voltage
V_BR,
V_R
I_R = 100 μA
Forward voltage
I_F = 8 A
V_F
I_F = 8 A, T_J = 150 °C
Reverse leakage current
V_R = V_R rated
I_R
T_J = 150 °C, V_R = V_R rated
Junction capacitance
C_T
V_R = 400 V
Series inductance
L_S
Measured lead to lead 5 mm from package body
MIN.
400
-
-
-
-
-
-
TYP.
-
1.19
0.94
0.2
20
14
8.0
MAX.
-
1.3
1.0
10
500
-
-
UNITS
V
μA
pF
nH
Revision: 10-Jul-15
1
Document Number: 94031
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000