VS-8ETH03PBF Datasheet, PDF (2/8 Pages) Vishay Siliconix – Hyperfast Rectifier, 8 A FRED Pt

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VS-8ETH03PbF, VS-8ETH03-N3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_C = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
I_F = 1 A, dI_F/dt = - 50 A/μs, V_R = 30 V
-
-
Reverse recovery time
t_rr
T_J = 25 °C
-
27
T_J = 125 °C
-
40
Peak recovery current
T_J = 25 °C
I_F = 8 A
-
2.2
I_RRM
dI_F/dt = - 200 A/μs
T_J = 125 °C
V_R = 200 V
-
5.3
Reverse recovery charge
T_J = 25 °C
Q_rr
T_J = 125 °C
-
30
-
106
MAX.
35
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
T_J, T_Stg
Thermal resistance,
junction to case per leg
R_thJC
Thermal resistance,
junction to ambient per leg
R_thJA
Typical socket mount
Thermal resistance,
case to heatsink
R_thCS
Mounting surface, flat, smooth
and greased
Weight
Mounting torque
Marking device
Case style TO-220AC
MIN.
-65
-
-
-
-
-
6.0
(5.0)
TYP.
-
MAX.
175
1.45
2.5
-
70
0.2
-
2.0
-
0.07
-
-
12
(10)
8ETH03
UNITS
°C
°C/W
g
oz.
kgf · cm
(lbf · in)
Revision: 09-Jun-15
2
Document Number: 94024
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