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VS-8ETH03PBF Datasheet, PDF (1/8 Pages) Vishay Siliconix – Hyperfast Rectifier, 8 A FRED Pt
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VS-8ETH03PbF, VS-8ETH03-N3
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt®
TO-220AC
Base
cathode
2
1
3
Cathode Anode
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Designed and qualified according to
JEDEC®-JESD 47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Available
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr typ.
TJ max.
Diode variation
TO-220AC
8A
300 V
0.83 V
See Recovery table
175 °C
Single die
DESCRIPTION / APPLICATIONS
300 V series are the state of the art hyperfast recovery
rectifiers designed with optimized performance of forward
voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
VRRM
IF(AV)
IFSM
TJ, TStg
TEST CONDITIONS
TC = 155 °C
TC = 25 °C
VALUES
300
8
100
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA
300
IF = 8 A
-
Forward voltage
VF
IF = 8 A, TJ = 125 °C
-
VR = VR rated
-
Reverse leakage current
IR
TJ = 125 °C, VR = VR rated
-
Junction capacitance
CT
VR = 300 V
-
Series inductance
LS
Measured lead to lead 5 mm from package body
-
TYP.
-
1.0
0.83
0.02
6.0
31
8
MAX.
-
1.25
1.00
20
200
-
-
UNITS
V
μA
pF
nH
Revision: 09-Jun-15
1
Document Number: 94024
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000