VS-8CSH01HM3 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Specified for output and snubber operation

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VS-8CSH01HM3
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
I_F = 1 A, dI_F/dt = 50 A/μs, V_R = 30 V
-
25
I_F = 0.5 A, I_R = 1 A, I_rr = 0.25 A
t_rr
T_J = 25 °C
-
-
-
18
I_RRM
Q_rr
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
-
27
I_F = 4 A
-
2
dI_F/dt = 200 A/μs
V_R = 160 V
-
3.6
-
18
-
50
MAX.
-
25
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
T_J, T_Stg
Thermal resistance, junction
to solder pad, per diode
R_thJ-Sp
Approximate weight
Marking device
Case style SMPC (TO-277A)
MIN.
-65
-
TYP.
-
MAX.
175
2.5
3.5
0.1
0.0035
QCH1
UNITS
°C
°C/W
g
oz.
100
10 _{TJ = 175 °C}
1
T_J = 150°C
T_J = 125°C
T_J = 25 °C
0.1
0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_F - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
100
175 °C
10
150 °C
1
125 °C
0.1
0.01
0.001
25 °C
0.0001
0
25
50
75
100
V_R - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 28-Mar-17
2
Document Number: 95705
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