VS-8CSH01HM3 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Specified for output and snubber operation

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VS-8CSH01HM3
Vishay Semiconductors
Hyperfast Rectifier, 2 x 4 A FRED Pt^®
K
1
2
SMPC (TO-277A)
K
Cathode
Anode 1
Anode 2
FEATURES
• Hyperfast recovery time, reduced Q_rr, and soft
recovery
• 175 °C maximum operating junction temperature
• Specified for output and snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
I_F(AV)
V_R
V_F at I_F
t_{rr (typ.)}
T_J max.
Diode variation
SMPC (TO-277A)
2x4A
100 V
0.72 V
25 ns
175 °C
Dual die
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
These devices are intended for use in snubber, boost,
lighting, piezo-injection, as high frequency rectifiers, and
freewheeling diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
per device
per diode
Non-repetitive peak surge current
per device
per diode
Operating junction and storage temperatures
SYMBOL
V_RRM
I_F(AV)
I_FSM
T_J, T_Stg
TEST CONDITIONS
T_Sp = 160 °C
T_J = 25 °C
VALUES
100
8
4
130
70
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
V_BR,
V_R
I_R = 100 μA
100
I_F = 4 A
-
Forward voltage, per diode
V_F
I_F = 4 A, T_J = 150 °C
-
V_R = V_R rated
-
Reverse leakage current, per diode
I_R
T_J = 150 °C, V_R = V_R rated
-
Junction capacitance
C_T
V_R = 100 V
-
TYP.
-
0.89
0.72
-
4
18
MAX.
-
0.95
0.78
2
80
-
UNITS
V
μA
pF
Revision: 28-Mar-17
1
Document Number: 95705
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000