VS-65PQ015PBF Datasheet, PDF (2/8 Pages) Vishay Siliconix – High Performance Schottky Rectifier

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VS-65PQ015PbF, VS-65PQ015-N3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Forward voltage drop
V_FM ⁽¹⁾
Reverse leakage current
I_RM ⁽¹⁾
Threshold voltage
Forward slope resistance
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
V_F(TO)
r_t
C_T
L_S
dV/dt
Note
(1) _{Pulse width < 300 μs, duty cycle < 2 %}
65 A
130 A
65 A
130 A
T_J = 125 °C
T_J = 25 °C
T_J = 100 °C
TEST CONDITIONS
T_J = 25 °C
T_J = 125 °C
V_R = 5 V
V_R = Rated V_R
T_J = T_J maximum
V_R = 5 V_DC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V_R
VALUES
0.50
0.71
0.46
0.76
1.2
18
870
0.137
4.9
4300
8
10 000
UNITS
V
A
mA
mV
m
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
T_J
Maximum storage temperature range
Maximum thermal resistance, 
junction to case
Typical thermal resistance, 
case to heatsink
T_Stg
R_thJC
R_thCS
DC operation
Mounting surface, smooth and greased
Approximate weight
Mounting torque
Marking device
minimum
maximum
Non-lubricated threads
Case style TO-247AC (JEDEC)
VALUES
- 55 to 125
- 55 to 150
UNITS
°C
0.8
°C/W
0.3
6
g
0.21
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
65PQ015
Revision: 17-Jul-13
2
Document Number: 94246
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