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VS-65PQ015PBF Datasheet, PDF (1/8 Pages) Vishay Siliconix – High Performance Schottky Rectifier
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VS-65PQ015PbF, VS-65PQ015-N3
Vishay Semiconductors
High Performance Schottky Rectifier, 65 A
Base cathode
2
3
2
1
TO-247AC
1
Anode
3
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
TO-247AC
65 A
15 V
0.46 V
870 mA at 100 °C
125 °C
Single die
9 mJ
FEATURES
• 125 °C TJ operation (VR < 5 V)
• Single diode configuration
• Optimized for OR-ing applications
• Ultralow forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Available
• Designed and qualified according to JEDEC-JESD47
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-65PQ015... Schottky rectifier module has been
optimized for ultralow forward voltage drop specifically for
the OR-ing of parallel power supplies. The proprietary
barrier technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in parallel
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ
Rectangular waveform
tp = 5 μs sine
65 Apk, TJ = 125 °C
Range
VALUES
65
15
1500
0.46
- 55 to 125
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL
VR
TEST CONDITIONS
TJ = 100 °C
TJ = 125 °C
VS-65PQ015PbF
15
5
VS-65PQ015-N3
15
5
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
SYMBOL
TEST CONDITIONS
IF(AV)
50 % duty cycle at TC = 83 °C, rectangular waveform
Maximum peak one cycle
non-repetitive surge current
5 µs sine or 3 µs rect. pulse
Following any rated load
IFSM
condition and with rated
10 ms sine or 6 ms rect. pulse VRRM applied
Non-repetitive avalanche energy EAS
Repetitive avalanche current
IAR
TJ = 25 °C, IAS = 2 A, L = 4.5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
65
1500
400
9
2
UNITS
A
mJ
A
Revision: 17-Jul-13
1
Document Number: 94246
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000