VS-43CTQ100HN3 Datasheet, PDF (2/7 Pages) Vishay Siliconix – High frequency operation

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VS-43CTQ100HN3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop per leg
See fig. 1
V_FM ⁽¹⁾
Maximum reverse leakage current per leg
See fig. 2
Threshold voltage
Forward slope resistance
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1) _{Pulse width < 300 μs, duty cycle < 2 %}
I_RM ⁽¹⁾
V_F(TO)
r_t
C_T
L_S
dV/dt
20 A
40 A
20 A
40 A
T_J = 25 °C
T_J = 125 °C
TEST CONDITIONS
T_J = 25 °C
T_J = 125 °C
V_R = Rated V_R
T_J = T_J maximum
V_R = 5 V_DC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V_R
VALUES
0.81
0.98
0.67
0.81
1
11
0.71
0.43
1480
8.0
10 000
UNITS
V
mA
V
m
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
T_J, T_Stg
Maximum thermal resistance, 
junction to case per leg
Maximum thermal resistance, 
junction to case per package
R_thJC
DC operation
Typical thermal resistance, 
case to heatsink
R_thCS Mounting surface, smooth and greased
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style TO-220AB
VALUES
- 55 to 175
UNITS
°C
2.0
1.0
°C/W
0.50
2
g
0.07
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
43CTQ100H
Revision: 05-Mar-14
2
Document Number: 94849
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