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VS-43CTQ100HN3 Datasheet, PDF (1/7 Pages) Vishay Siliconix – High frequency operation
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VS-43CTQ100HN3
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 20 A
Base 2
common
cathode
1 23
TO-220AB
Anode
2
Anode
1 Common 3
cathode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
TO-220AB
2 x 20 A
100 V
0.67 V
11 mA at 125 °C
175 °C
Common cathode
7.50 mJ
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
• AEC-Q101 qualified
• Meets JESD 201 class 2 whisker test
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF
20 Apk, TJ = 125 °C (per leg)
TJ
Range
VALUES
40
100
850
0.67
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-43CTQ100HN3
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum average forward current  per leg
20
See fig. 5
IF(AV)
50 % duty cycle at TC = 135 °C, rectangular waveform
per device
40
Maximum peak one cycle 
non-repetitive surge current per leg
See fig. 7
5 µs sine or 3 µs rect. pulse Following any rated
850
A
IFSM
load condition and
10 ms sine or 6 ms rect. pulse
with rated VRRM
applied
275
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
EAS
TJ = 25 °C, IAS = 0.50 A, L = 60 mH
7.50
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
0.50
A
Revision: 05-Mar-14
1
Document Number: 94849
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000