VS-42CTQ030SPBF_15 Datasheet, PDF (2/9 Pages) Vishay Siliconix – High Performance Schottky Rectifier

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VS-42CTQ030SPbF, VS-42CTQ030-1PbF
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop per leg
See fig. 1
V_FM ⁽¹⁾
Maximum reverse leakage current per leg
See fig. 2
Threshold Voltage
Forward slope resistance
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1) _{Pulse width < 300 μs, duty cycle < 2 %}
I_RM ⁽¹⁾
V_F(TO)
r_t
C_T
L_S
dV/dt
20 A
40 A
20 A
40 A
T_J = 25 °C
T_J = 125 °C
TEST CONDITIONS
T_J = 25 °C
T_J = 125 °C
V_R = Rated V_R
T_J =T_J maximum
V_R = 5 V_DC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V_R
VALUES
0.48
0.57
0.38
0.51
3
183
0.22
6.76
2840
8.0
10 000
UNITS
V
mA
V
m
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Typical thermal resistance, 
case to heatsink
T_J, T_Stg
R_thJC
DC operation
R_thCS
Mounting surface, smooth and greased
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style TO-263AB (D²PAK)
Case style TO-262AA
VALUES
-55 to +150
UNITS
°C
2.0
1.0
°C/W
0.50
2
g
0.07
oz.
6 (5)
12 (10)
kgf cm
(lbf in)
42CTQ030S
42CTQ030-1
Revision: 21-Oct-14
2
Document Number: 94221
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