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VS-42CTQ030SPBF_15 Datasheet, PDF (1/9 Pages) Vishay Siliconix – High Performance Schottky Rectifier
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VS-42CTQ030SPbF, VS-42CTQ030-1PbF
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 20 A
TO-263AB (D2PAK)
TO-262AA
Base
common
cathode
2
Base
common
cathode
2
2
1 Common 3
Anode cathode Anode
VS-42CTQ030SPbF
2
1 Common 3
Anode cathode Anode
VS-42CTQ030-1PbF
PRODUCT SUMMARY
Package
TO-263AB (D2PAK), TO-262AA
IF(AV)
2 x 20 A
VR
VF at IF
IRM max.
30 V
0.38
183 mA at 125 °C
TJ max.
Diode variation
150 °C
Common cathode
EAS
13
FEATURES
• 150 °C TJ operation
• Center tap configuration
• Very low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength and
moisture resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This center tap Schottky rectifier module has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, freewheeling
diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ
Rectangular waveform
tp = 5 μs sine
20 Apk, TJ = 125 °C (per leg)
Range
VALUES
40
30
1100
0.38
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-42CTQ030SPbF
VS-42CTQ030-1PbF
30
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward
current, see fig. 5
per leg
per device
IF(AV)
Maximum peak one cycle non-repetitive 
surge current per leg, see fig. 7
IFSM
Non-repetitive avalanche energy per leg
EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
50 % duty cycle at TC = 121 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
10 ms sine or 6 ms rect. pulse VRRM applied
TJ = 25 °C, IAS = 3 A, L = 2.90 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
20
40
1100
360
13
3
UNITS
A
mJ
A
Revision: 21-Oct-14
1
Document Number: 94221
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000