VS-40TPS16PBF_15 Datasheet, PDF (2/9 Pages) Vishay Siliconix – Thyristor High Voltage, Phase Control SCR

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VS-40TPS16PbF, VS-40TPS16-M3
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
Maximum continuous RMS
on-state current as AC switch
I_T(AV)
I_T(RMS)
Maximum peak, one-cycle 
non-repetitive surge current
I_TSM
Maximum I²t for fusing
I²t
Maximum I²ïƒ–t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum peak on-state voltage
Maximum rate of rise of turned-on current
Maximum holding current
Maximum latching current
I²ïƒ–t
V_T(TO)1
V_T(TO)2
r_t1
r_t2
V_TM
dI/dt
I_H
I_L
Maximum reverse and direct leakage current I_RRM/I_DRM
Maximum rate of rise of off-state voltage
dV/dt
TEST CONDITIONS
T_C = 79 °C, 180° conduction half sine wave
VALUES UNITS
35
55
10 ms sine pulse, rated V_RRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V_RRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
Initial T_J =
T_J maximum
T_J = 125 °C
110 A, T_J = 25 °C
T_J = 25 °C
Anode supply = 6 V, resistive load, initial I_T = 1 A, T_J = 25 °C
Anode supply = 6 V, resistive load, T_J = 25 °C
T_J = 25 °C
T_J = 125 °C
V_R = Rated V_RRM/V_DRM
T_J = T_J maximum, linear to 80 % V_DRM, R_g - k = Open
420
500
880
1250
12 500
1.02
1.23
9.74
7.50
1.85
100
200
300
0.5
10
1000
A
A²s
A²ïƒ–s
V
m
V
A/µs
mA
V/µs
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
Maximum required DC gate 
voltage to trigger
SYMBOL
P_GM
P_G(AV)
I_GM
- V_GM
V_GT
Maximum required DC gate current to trigger
I_GT
Maximum DC gate voltage not to trigger
V_GD
Maximum DC gate current not to trigger
I_GD
TEST CONDITIONS
VALUES
10
2.5
2.5
10
T_J = - 40 °C
T_J = 25 °C
Anode supply = 6 V resistive load
T_J = 125 °C
T_J = - 40 °C
T_J = 25 °C
Anode supply = 6 V resistive load
T_J = 125 °C
T_J = 25 °C, for 40TPS08A
T_J = 125 °C, V_DRM = Rated value
4.0
2.5
1.7
270
150
80
40
0.25
6
UNITS
W
A
V
mA
V
mA
Revision: 06-Feb-14
2
Document Number: 94389
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