VF30100S_15 Datasheet, PDF (2/5 Pages) Vishay Siliconix – High-Voltage Trench MOS Barrier Schottky Rectifier

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VF30100S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
Reverse current
I_F = 5 A
I_F = 10 A
I_F = 30 A
I_F = 5 A
I_F = 10 A
I_F = 30 A
V_R = 70 V
V_R = 100 V
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_F ⁽¹⁾
I_R ⁽²⁾
0.47
0.55
0.80
0.39
0.49
0.69
27
11
70
23
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
MAX.
-
-
0.91
-
-
0.78
-
-
1000
45
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
R_JC
VF30100S
4.0
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
ITO-220AB
VF30100S-M3/4W
1.805
PACKAGE CODE
4W
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
Revision: 09-Nov-15
2
Document Number: 89195
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