VF30100S_15 Datasheet, PDF (1/5 Pages) Vishay Siliconix – High-Voltage Trench MOS Barrier Schottky Rectifier

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VF30100S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.39 V at I_F = 5 A
TMBS ^®
ITO-220AB
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
123
VF30100S
PIN 1
PIN 2
PIN 3
PRIMARY CHARACTERISTICS
I_F(AV)
30 A
V_RRM
I_FSM
100 V
250 A
V_F at I_F = 30 A
0.69 V
T_J max.
150 °C
Package
ITO-220AB
Diode variation
Single diode
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
V_RRM
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
I_F(AV)
I_FSM
Isolation voltage from terminal to heat sink t = 1 min
V_AC
Operating junction and storage temperature range
T_J, T_STG
VF30100S
100
30
250
1500
-40 to +150
UNIT
V
A
A
V
°C
Revision: 09-Nov-15
1
Document Number: 89195
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000