VBPW34S_11 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Silicon PIN Photodiode

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VBPW34S, VBPW34SR
Vishay Semiconductors
BASIC CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Temperature coefficient of V_o
Short circuit current
Temperature coefficient of I_k
Reverse light current
Angle of half sensitivity
I_F = 50 mA
V_F
I_R = 100 μA, E = 0
V_(BR)
60
V_R = 10 V, E = 0
I_ro
V_R = 0 V, f = 1 MHz, E = 0
C_D
V_R = 3 V, f = 1 MHz, E = 0
C_D
E_e = 1 mW/cm², λ = 950 nm
V_o
E_e = 1 mW/cm², λ = 950 nm
TK_Vo
E_e = 1 mW/cm², λ = 950 nm
I_k
E_e = 1 mW/cm², λ = 950 nm
TK_Ik
E_e = 1 mW/cm², λ = 950 nm,
V_R = 5 V
I_ra
45
ϕ
Wavelength of peak sensitivity
Range of spectral bandwidth
Noise equivalent power
Rise time
V_R = 10 V, λ = 950 nm
V_R = 10 V, R_L = 1 kΩ,
λ = 820 nm
λ_p
λ_0.1
NEP
t_r
Fall time
V_R = 10 V, R_L = 1 kΩ,
λ = 820 nm
t_f
BASIC CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
TYP.
1
2
70
25
350
- 2.6
50
0.1
55
± 65
940
430 to 1100
4 x 10^-14
100
100
MAX.
1.3
30
40
UNIT
V
V
nA
pF
pF
mV
mV/K
μA
%/K
μA
deg
nm
nm
W/√Hz
ns
ns
1000
100
10
V_R = 10 V
1
20
94 8403
40
60
80
100
T_amb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
1.4
1.2
V_R = 5 V
λ = 950 nm
1.0
0.8
0.6
0
94 8409
20
40
60
80 100
T_amb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Rev. 1.2, 24-Aug-11
2
Document Number: 81128
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