V20200C-E3 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Trench MOS Schottky technology

V20200C-E3, VF20200C-E3, VB20200C-E3, VI20200C-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
I_R = 1.0 mA TA = 25 °C
V_BR
Instantaneous forward voltage per diode ⁽¹⁾
I_F = 5 A
I_F = 10 A
I_F = 5 A
I_F = 10 A
T_A = 25 °C
T_A = 125 °C
V_F
Reverse current per diode ⁽²⁾
V_R = 180 V
V_R = 200 V
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
I_R
200 (min.)
0.85
1.21
0.60
0.68
6
3.6
-
5.6
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
MAX.
-
-
1.60
-
0.76
-
-
150
18
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20200C
VF20200C
Typical thermal resistance per diode
R_JC
2.8
5.0
VB20200C
2.8
VI20200C
2.8
UNIT
V
V
μA
mA
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V20200C-E3/4W
1.88
ITO-220AB
VF20200C-E3/4W
1.75
TO-263AB
VB20200C-E3/4W
1.37
TO-263AB
VB20200C-E3/8W
1.37
TO-262AA
VI20200C-E3/4W
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube

RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
25
Resistive or Inductive Load
20
V20200C
15
VF20200C
10
5
0
0
25 50
75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
9
D = 0.8
8
D = 0.5
D = 0.3
7
D = 0.2
6
D = 0.1
D = 1.0
5
4
3
T
2
1
D = t_p/T
t_p
0
0
2
4
6
8
10
12
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 12-Dec-16
2
Document Number: 89072
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