V20200C-E3 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Trench MOS Schottky technology

V20200C-E3, VF20200C-E3, VB20200C-E3, VI20200C-E3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.60 V at I_F = 5 A
TO-220AB
TMBS ^®
ITO-220AB
V20200C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
VF20200C
123
PIN 1
PIN 2
PIN 3
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB and
TO-262AA package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TO-263AB
K
TO-262AA
K
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
2
1
VB20200C
PIN 1
K
PIN 2
HEATSINK
VI20200C
3
2
1
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F at I_F = 10 A
T_J max.
Package
2 x 10 A
200 V
120 A
0.68 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Diode variations
Common cathode
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V20200C VF20200C VB20200C VI20200C
Max. repetitive peak reverse voltage
V_RRM
200
per device
20
Max. average forward rectified current (fig. 1)
per diode
I_F(AV)
10
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I_FSM
120
Non-repetitive avalanche energy at T_J = 25 °C, L = 60 mH 
per diode
E_AS
100
Peak repetitive reverse current at t_p = 2 μs, 1 kHz, 
T_J = 38 °C ± 2 °C per diode
Voltage rate of change (rated V_R)
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
I_RRM
dV/dt
V_AC
0.5
10 000
1500
Operating junction and storage temperature range
T_J, T_STG
-40 to +150
UNIT
V
A
A
mJ
A
V/μs
V
°C
Revision: 12-Dec-16
1
Document Number: 89072
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000