V20120C-E3_15 Datasheet, PDF (2/4 Pages) Vishay Siliconix – High-Voltage Trench MOS Barrier Schottky Rectifier

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VF20120SG
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage
Reverse current
I_F = 5 A
I_F = 10 A
I_F = 20 A
I_F = 5 A
I_F = 10 A
I_F = 20 A
V_R = 90 V
V_R = 120 V
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_F ⁽¹⁾
I_R ⁽²⁾
TYP.
0.62
0.81
1.20
0.54
0.65
0.78
10
7
-
12
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
R_JC
VF20120SG
4.2
MAX.
-
-
1.33
-
-
0.88
-
-
250
25
UNIT
V
μA
mA
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
ITO-220AB
VF20120SG-M3/4W
1.75
PACKAGE CODE
4W
BASE QUANTITY
50/tube
DELIVERY MODE
Tube

RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
25
Resistive or Inductive Load
20
15
10
5
Mounted on Specific Heatsink
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
35
D = 0.5
30
D = 0.3
25
D = 0.2
20 _{D = 0.1}
15
10
D = 0.8
D = 1.0
T
5
D = t_p/T
t_p
0
0
4
8
12
16
20
24
Average Forward Current (A)
Fig. 2 - Forward Power Dissipation Characteristics
Revision: 28-Oct-13
2
Document Number: 89265
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