V20120C-E3_15 Datasheet, PDF (1/4 Pages) Vishay Siliconix – High-Voltage Trench MOS Barrier Schottky Rectifier

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VF20120SG
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.54 V at I_F = 5 A
TMBS ^®
ITO-220AB
123
VF20120SG
PIN 1
PIN 2
PIN 3
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s,
per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
I_F(AV)
20 A
V_RRM
I_FSM
V_F at I_F = 20 A
120 V
150 A
0.78 V
T_J max.
150 °C
Package
ITO-220AB
Diode variation
Single die
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
V_RRM
I_F(AV)
I_FSM
Voltage rate of change (rated V_R)
Isolation voltage from termal to heatsink t = 1 min
dV/dt
V_AC
Operating junction and storage temperature range
T_J, T_STG
VF20120SG
120
20
150
10 000
1500
-40 to +150
UNIT
V
A
A
V/μs
V
°C
Revision: 28-Oct-13
1
Document Number: 89265
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000