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V20100SG_09 Datasheet, PDF (2/5 Pages) Vishay Siliconix – High-Voltage Trench MOS Barrier Schottky Rectifier
New Product
V20100SG, VF20100SG, VB20100SG, VI20100SG
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage
Reverse current
IR = 10 mA
IF = 5 A
IF = 10 A
IF = 20 A
IF = 5 A
IF = 10 A
IF = 20 A
VR = 70 V
VR = 100 V
TA = 25 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VBR
VF (1)
IR (2)
105 (minimum)
0.55
0.66
0.91
0.50
0.59
0.75
15
6
60
13
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
MAX.
-
-
-
1.07
-
-
0.82
-
-
350
25
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20100SG VF20100SG VB20100SG
Typical thermal resistance
RθJC
2.2
4.0
2.2
VI20100SG
2.2
UNIT
V
V
µA
mA
µA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V20100SG-E3/4W
1.88
ITO-220AB
VF20100SG-E3/4W
1.74
TO-263AB
VB20100SG-E3/4W
1.37
TO-263AB
VB20100SG-E3/8W
1.37
TO-262AA
VI20100SG-E3/4W
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
24
Resistive or Inductive Load
20
V20100SG
VI20100SG
VB20100SG
16
VF20100SG
12
8
4
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
25
D = 0.5 D = 0.8
D = 0.3
20
D = 0.2
D = 0.1
D = 1.0
15
10
T
5
D = tp/T
tp
0
0
4
8
12
16
20
24
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
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2
For technical questions within your region, please contact one of the following: Document Number: 88966
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 08-Oct-09