V20100SG_09 Datasheet, PDF (1/5 Pages) Vishay Siliconix – High-Voltage Trench MOS Barrier Schottky Rectifier

New Product
V20100SG, VF20100SG, VB20100SG, VI20100SG
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.50 V at I_F = 5 A
TO-220AB
TMBS ^®
ITO-220AB
V20100SG
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
123
VF20100SG
PIN 1
PIN 2
PIN 3
TO-262AA
K
A
NC
VB20100SG
NC
K
A
HEATSINK
VI20100SG
3
2
1
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
I_F(AV)
20 A
V_RRM
100 V
I_FSM
150 A
V_F at I_F = 20 A
0.75 V
T_J max.
150 °C
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per JESD
22-B106 (for TO-220AB, ITO-220AB, and TO-262AA
package)
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB, and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V20100SG VF20100SG VB20100SG VI20100SG
Maximum repetitive peak reverse voltage
V_RRM
100
Maximum average forward rectified current (fig. 1)
I_F(AV)
20
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
I_FSM
150
Non-repetitive avalanche energy at T_J = 25 °C, L = 60 mH
Peak repetitive reverse current
at t_p = 2 µs, 1 kHz, T_J = 38 °C ± 2 °C
Voltage rate of change (rated V_R)
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
E_AS
I_RRM
dV/dt
V_AC
150
1.0
10 000
1500
Operating junction and storage temperature range
T_J, T_STG
- 40 to + 150
UNIT
V
A
A
mJ
A
V/µs
V
°C
Document Number: 88966 For technical questions within your region, please contact one of the following:
Revision: 08-Oct-09
[e-mail], [e-mail], [e-mail]
www.vishay.com
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