V20100SG Datasheet, PDF (2/5 Pages) Vishay Siliconix – High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

New Product
V20100SG, VF20100SG & VI20100SG
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
at I_R = 1.0 mA T_A = 25 °C
V_BR
100 (minimum)
Instantaneous forward voltage ⁽¹⁾
at I_F = 5 A
I_F = 10 A
T_A = 25 °C
I_F = 20 A
V_F
at I_F = 5 A
I_F = 10 A
T_A = 125 °C
I_F = 20 A
0.55
0.66
0.91
0.50
0.59
0.75
Reverse current ⁽²⁾
at V_R = 70 V
T_A = 25 °C
T_A = 125 °C
15
6
I_R
at V_R = 100 V
T_A = 25 °C
T_A = 125 °C
60
13
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: 10 ms pulse width
MAX.
-
-
-
0.97
-
-
0.80
-
-
350
25
UNIT
V
µA
mA
µA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20100SG VF20100SG
Typical thermal resistance
R_θJC
2.2
4.0
VI20100SG
2.2
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
V20100SG-E3/4W
1.88
ITO-220AB
VF20100SG-E3/4W
1.74
TO-262AA
VI20100SG-E3/4W
1.45
PACKAGE CODE
4W
4W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
DELIVERY MODE
Tube
Tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
24
Resistive or Inductive Load
20
16
VF20100SG
V20100SG
VI20100SG
12
8
4
0
0
25
50 75 100 125 150 175
Case Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
25
D = 0.5 ^{D = 0.8}
D = 0.3
20
D = 0.2
D = 0.1
D = 1.0
15
10
T
5
D = t_p/T
t_p
0
0
4
8
12
16
20
24
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics
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2
Document Number: 88966
Revision: 19-Oct-07