V20100SG Datasheet, PDF (1/5 Pages) Vishay Siliconix – High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

New Product
V20100SG, VF20100SG & VI20100SG
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.50 V at I_F = 5 A
TO-220AB
TMBS ^®
ITO-220AB
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
V20100SG
3
2
1
PIN 1
PIN 2
PIN 3
CASE
VF20100SG
23
1
PIN 1
PIN 2
PIN 3
• Low thermal resistance
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TO-262AA
K
3
2
1
VI20100SG
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F at I_F = 20 A
T_J max.
20 A
100 V
150 A
0.75 V
150 °C
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB and TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for commercial grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V20100SG
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
V_RRM
I_F(AV)
I_FSM
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 min
V_AC
Operating junction and storage temperature range
T_J, T_STG
VF20100SG
100
20
150
1500
- 40 to + 150
VI20100SG
UNIT
V
A
A
V
°C
Document Number: 88966
Revision: 19-Oct-07
www.vishay.com
1