V20100C-E3 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Trench MOS Schottky technology

V20100C-E3, VB20100C-E3, VF20100C-E3, VI20100C-E3
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Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage 
per diode
Reverse current per diode
I_R = 10 mA
I_F = 5 A
I_F = 10 A
I_F = 5 A
I_F = 10 A
V_R = 70 V
V_R = 100 V
T_A = 25 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_BR
V_F ⁽¹⁾
I_R ⁽²⁾
105 (minimum)
0.55
0.65
0.50
0.58
17
5.3
-
12
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
MAX.
-
-
0.79
-
0.68
-
-
800
25
UNIT
V
V
µA
mA
µA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V20100C
VF20100C
Typical thermal resistance per diode
R_JC
2.8
5.5
VB20100C
2.8
VI20100C
2.8
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V20100C-E3/4W
1.881
ITO-220AB
VF20100C-E3/4W
1.75
TO-263AB
VB20100C-E3/4W
1.39
TO-263AB
VB20100C-E3/8W
1.39
TO-262AA
VI20100C-E3/4W
1.452
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/tube
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
24
Resistive or Inductive Load
20
VF20100C
16
VI(B)20100C
12
V20100C
8
4
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
20
18
16
14
12
10
8
6
4
2
0
0
D = 0.8
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 1.0
T
D = t_p/T
t_p
4
8
12
16
20
24
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Per Diode
Revision: 13-Dec-16
2
Document Number: 88977
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