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V20100C-E3 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Trench MOS Schottky technology
V20100C-E3, VB20100C-E3, VF20100C-E3, VI20100C-E3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V20100C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
VF20100C
123
PIN 1
PIN 2
PIN 3
FEATURES
• Trench MOS Schottky technology
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB
package)
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C maximum 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TO-263AB
K
TO-262AA
K
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
2
1
VB20100C
PIN 1
K
PIN 2
HEATSINK
VI20100C
PIN 1
3
2
1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 10 A
TJ max.
Package
2 x 10 A
100 V
150 A
0.58 V
150 °C
TO-220AB, ITO-220AB, TO-263AB, TO-262AA
Diode variation
Common cathode
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum







MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V20100C VF20100C VB20100C VI20100C
Maximum repetitive peak reverse voltage
VRRM
100
per device
20
Maximum average forward rectified current (fig. 1)
per diode
IF(AV)
10
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
150
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C ± 2 °C per diode
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
Operating junction and storage temperature range
EAS
IRRM
dV/dt
VAC
TJ, TSTG
150
1.0
10 000
1500
-40 to +150
UNIT
V
A
A
mJ
A
V/μs
V
°C
Revision: 13-Dec-16
1
Document Number: 88977
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000