 English |
|
|
|
|
|
|
|
| V12P12 Datasheet, PDF (2/5 Pages) Vishay Siliconix – High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier | |||
| |||
| ◁ |
V12P12
Vishay General Semiconductor
New Product
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
IR = 1.0 mA
TA = 25 °C
VBR
120 (minimum)
Instantaneous forward voltage (1)
IF = 6 A
IF = 12 A
IF = 6 A
IF = 12 A
TA = 25 °C
VF
TA = 125 °C
0.57
0.72
0.51
0.63
Reverse current (2)
VR = 90 V
TA = 25 °C
TA = 125 °C
13
7
IR
VR = 120 V
TA = 25 °C
TA = 125 °C
50
16
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ⤠40 ms
MAX.
-
-
0.80
-
0.70
-
-
500
50
UNIT
V
V
µA
mA
µA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
RθJA (1)
RθJL
Note:
(1) Units mounted on recommended P.C.B. 1 oz. pad layout
V12P12
60
4
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
V12P12-E3/86A
0.10
86A
V12P12-E3/87A
0.10
87A
V12P12-M3/86A
0.10
86A
V12P12-M3/87A
0.10
87A
BASE QUANTITY
1500
6500
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89094
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 29-Jul-08
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese