V12P12 Datasheet, PDF (1/5 Pages) Vishay Siliconix – High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

New Product
V12P12
Vishay General Semiconductor
High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low V_F = 0.51 V at I_F = 6 A
FEATURES
TMBS^® eSMP ^TM Series
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
K
• Trench MOS Schottky technology
• Low forward voltage drop, low power
1
losses
2
• High efficiency operation
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
• Halogen-free
I_F(AV)
V_RRM
I_FSM
E_AS
V_F at I_F = 12 A
T_J max.
12 A
120 V
150 A
100 mJ
0.63 V
150 °C
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, dc-to-dc converters and polarity
protection applications.
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94V-0 flammability
rating.
Base P/N-E3 - RoHS compliant, commercial grade
Base P/N-M3 - halogen-free and RoHS compliant,
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 and M3 suffix meets JESD 201 class 1A whisker
test
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
V_RRM
I_F(AV)
I_FSM
Non-repetitive avalanche energy
at I_AS = 2.0 A, L = 50 mH, T_J = 25 °C
Operating junction and storage temperature range
E_AS
T_J, T_STG
V12P12
V1212
120
12
150
100
- 40 to + 150
UNIT
V
A
A
mJ
°C
Document Number: 89094 For technical questions within your region, please contact one of the following:
Revision: 29-Jul-08
[e-mail], [e-mail], [e-mail]
www.vishay.com
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