UH1B-M3 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Oxide planar chip junction

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UH1B-M3, UH1C-M3, UH1D-M3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage
Reverse current
Maximum reverse recovery time
Typical reverse recovery time
Typical softness factor (t_b/t_a)
Typical reverse recovery current
Typical stored charge
Typical junction capacitance
I_F = 0.6 A
I_F = 1.0 A
I_F = 0.6 A
I_F = 1.0 A
Rated V_R
I_F = 0.5 A, I_R = 1.0 A,
I_rr = 0.25 A
I_F = 1.0 A, dI/dt = 50 A/μs,
V_R = 30 V, I_rr = 0.1 I_RM
I_F = 1.0 A, dI/dt = 200 A/μs,
V_R = 200 V
4.0 V, 1 MHz
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_F ⁽¹⁾
I_R ⁽²⁾
t_rr
S
I_RM
Q_rr
C_J
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 msï€} 
TYP.
0.90
0.96
0.70
0.76
-
7.5
13
21
0.8
2.7
35
17
MAX.
-
1.05
-
0.90
1.0
25
25
30
-
4.0
-
-
UNIT
V
μA
ns
-
A
nC
pF
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
UH1B
UH1C
UH1D
Typical thermal resistance
R_JA ⁽¹⁾
120
R_JM ⁽¹⁾
20
Note
(1) _{Free air, mounted on recommended copper pad area. Thermal resistance RJA - junction to ambient, RJM - junction to mountï€} 
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
UH1D-M3/61T
0.064
61T
UH1D-M3/5AT
0.064
5AT
BASE QUANTITY
1800
7500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
1.2
1.0
0.8
0.6
0.4
T_L Measured
at the Cathode Band Terminal
0.2
0
95 105 115 125 135 145 155 165 175
Lead Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
D = 0.8
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 1.0
T
D = t_p/T
t_p
0.2
0.4
0.6
0.8
1.0
1.2
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Revision: 23-Oct-13
2
Document Number: 89399
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