UH1B-M3 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Oxide planar chip junction

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UH1B-M3, UH1C-M3, UH1D-M3
Vishay General Semiconductor
Surface Mount Ultrafast Rectifier
DO-214AC (SMA)
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
t_rr
V_F at I_F = 1.0 A
T_J max.
Package
1.0 A
100 V, 150 V, 200 V
30 A
25 ns
0.76 V
175 °C
DO-214AC (SMA)
Diode variations
Single die
FEATURES
• Low profile package
• Ideal for automated placement
• Oxide planar chip junction
• Ultrafast recovery times for high frequency
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in secondary rectification and freewheeling
for ultrafast switching speeds AC/AC and DC/DC
converters in high temperature conditions for both
consumer applications.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
UH1B
Device marking code
HB
Maximum repetitive peak reverse voltage
V_RRM
100
Maximum average forward rectified current (fig. 1)
I_F(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
Operating junction and storage temperature range
T_J, T_STG
UH1C
HC
150
1.0
30
-55 to +175
UH1D
HD
200
UNIT
V
A
A
°C
Revision: 23-Oct-13
1
Document Number: 89399
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000