SUM110N04-04 Datasheet, PDF (2/5 Pages) Vishay Siliconix – N-Channel 40-V (D-S) 175C MOSFET

SUM110N04-04
Vishay Siliconix
New Product
SPECIFICATIONS (T_J =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Dynamic^b
V_(BR)DSS
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_DS = 0 V, I_D = 250 mA
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = 20 V
V_DS = 40 V, V_GS = 0 V
V_DS = 40 V, V_GS = 0 V, T_J = 125_C
V_DS = 40 V, V_GS = 0 V, T_J = 175_C
V_DS w 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 30 A
V_GS = 10 V, I_D = 30 A, T_J = 125_C
V_GS = 10 V, I_D = 30 A, T_J = 175_C
V_DS = 15 V, I_D = 30 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge^c
Gate-Source Charge^c
Gate-Drain Charge^c
Turn-On Delay Time^c
Rise Time^c
Turn-Off Delay Time^c
Fall Time^c
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
V_DS = 30 V, V_GS = 10 V, I_D = 110 A
V_DD = 30 V, R_L = 0.47 W
I_D ^ 110 A, V_GEN = 10 V, R_G = 2.5 W
Source-Drain Diode Ratings and Characteristics (T_C = 25_C)^b
Continuous Current
Pulsed Current
Forward Voltage^a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I_S
I_SM
V_SD
t_rr
I_RM(REC)
Q_rr
I_F = 110 A, V_GS = 0 V
I_F = 110 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min Typ Max Unit
40
V
2
4
100
nA
1
50
mA
250
120
A
0.0028 0.0035
0.0045
W
0.006
30
S
6800
1110
pF
690
140
200
35
nC
55
20
35
115
175
ns
75
115
85
130
110
A
350
1.1
1.4
V
50
80
ns
2
3
A
0.05
0.12
mC
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2
Document Number: 72077
S-22450—Rev. B, 20-Jan-03