SUM110N04-04 Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 40-V (D-S) 175C MOSFET

New Product
SUM110N04-04
Vishay Siliconix
N-Channel 40-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V_(BR)DSS (V)
40
r_DS(on) (W)
0.0035 @ V_GS = 10 V
TO-263
I_D (A)
110 ^a
D
FEATURES
D TrenchFETr Power MOSFETS: 1.8-V Rated
D 175_C Junction Temperature
APPLICATIONS
D Automotive
- ABS
- 12-V EPS
- Motor Drivers
G DS
Top View
SUM110N04-04
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
40
V_GS
20
Continuous Drain Current (T_J = 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy^b
Maximum Power Dissipation^b
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 125_C
L = 0.1 mH
T_C = 25_C
T_A = 25_C ^d
I_D
I_DM
I_AR
E_AR
P_D
T_J, T_stg
110^a
107^a
350
60
180
250^c
3.75
-55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)^d
Junction-to-Case
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 72077
S-22450—Rev. B, 20-Jan-03
Symbol
R_thJA
R_thJC
Limit
40
0.6
Unit
_C/W
www.vishay.com
1