SUD50P04-15 Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 40-V (D-S), 175C MOSFET

SUD50P04-15
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Dynamic^b
V_(BR)DSS
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_GS = 0 V, I_D = –250 mA
V_DS = V_GS, I_D = –250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = –40 V, V_GS = 0 V
V_DS = –40 V, V_GS = 0 V, T_J = 125_C
V_DS = –5 V, V_GS = –10 V
V_GS = –10 V, I_D = –30 A
V_GS = –10 V, I_D = –30 A, T_J = 125_C
V_GS = –4.5 V, I_D = –20 A
V_DS = –15 V, I_D = –30 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge^c
Gate-Source Charge^c
Gate-Drain Charge^c
Turn-On Delay Time^c
Rise Time^c
Turn-Off Delay Time^c
Fall Time^c
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
V_GS = 0 V, V_DS = –25 V, f = 1 MHz
V_DS = –20 V, V_GS = –10 V, I_D = –50 A
V_DD = –20 V, R_L = 0.4 W
I_D ^ –50 A, V_GEN = –10 V, R_G = 2.5 W
Source-Drain Diode Ratings and Characteristic (T_C = 25_C)
Pulsed Current
I_SM
Diode Forward Voltage^a
V_SD
Source-Drain Reverse Recovery Time
t_rr
I_F = –50 A, V_GS = 0 V
I_F = –50 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min Typ Max Unit
–40
V
–1.0
"100
nA
–1
mA
–50
–120
A
0.012
0.015
0.024
W
0.018
0.023
20
S
5400
640
pF
300
85
130
25
nC
15
15
25
380
580
ns
75
115
140
210
–150
A
–1.2
–1.5
V
40
80
ns
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2
Document Number: 71176
S-00830—Rev. A, 24-Apr-00