SUD50P04-15 Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 40-V (D-S), 175C MOSFET

New Product
SUD50P04-15
Vishay Siliconix
P-Channel 40-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V_DS (V)
–40
r_DS(on) (W)
0.015 @ V_GS = –10 V
0.023 @ V_GS = –4.5 V
I_D (A)
–50
–45
S
TO-252
GDS
Top View
Order Number:
SUD50P04-15
Drain Connected to Tab
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation^b
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 100_C
T_C = 25_C
T_A = 25_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
–40
"20
–50
–40
–150
–50
100^b
3^a
–55 to 175
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See SOA curve for voltage derating.
Document Number: 71176
S-00830—Rev. A, 24-Apr-00
t v 10 sec.
Steady State
Symbol
R_thJA
R_thJC
Typical
15
40
1.2
Maximum
18
50
1.5
Unit
_C/W
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