SUD50P04-13L_08 Datasheet, PDF (2/6 Pages) Vishay Siliconix – P-Channel 40-V (D-S) 175 °C MOSFET

SUD50P04-13L
Vishay Siliconix
New Product
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
V_(BR)DSS
V_GS(th)
V_GS = 0 V, I_D = - 250 µA
V_DS = V_GS, I_D = - 250 µA
- 40
- 1.0
V
- 3.0
Gate-Source Leakage
I_GSS
V_DS = 0 V, V_GS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
On-State Drain Current^a
I_DSS
I_D(on)
V_DS = - 40 V, V_GS = 0 V
V_DS = - 40 V, V_GS = 0 V, T_J = 125 °C
V_DS = - 5 V, V_GS = - 10 V
- 50
-1
µA
- 50
A
V_GS = - 10 V, I_D = - 30 A
0.0105 0.013
Drain-Source On-State Resistance^a
r_DS(on)
V_GS = - 10 V, I_D = - 30 A, T_J = 125 °C
0.020
Ω
Forward Transconductance^a
V_GS = - 4.5 V, I_D = - 20 A
0.017 0.022
g_fs
V_DS = - 15 V, I_D = - 30 A
15
S
Dynamic^b
Input Capacitance
C_iss
3120
Output Capacitance
C_oss
V_DS = - 25 V, V_GS = 0 V, f = 1 MHz
440
pF
Reverse Transfer Capacitance
C_rss
320
Gate Resistance
R_g
f = 1 MHz
4.3
Ω
Total Gate Charge^c
Q_g
63
95
Gate-Source Charge^c
Q_gs
V_DS = - 20 V, V_GS = - 10 V, I_D = - 50 A
13
nC
Gate-Drain Charge^c
Turn-On Delay Time^c
Q_gd
t_d(on)
16
15
25
Rise Time^c
Turn-Off Delay Time^c
t_r
t_d(off)
V_DD = - 20 V, R_L = 0.4 Ω
I_D ≅ - 50 A, V_GEN = - 10 V, R_g = 2.5 Ω
18
30
ns
60
90
Fall Time^c
t_f
47
70
Drain-Source Body Diode Characteristics
Pulse Current
Forward Voltage^a
I_SM
V_SD
I_F = - 50 A, V_GS = 0 V
- 100
- 1.0
- 1.5
V
Source-Drain Reverse Recovery Time
t_rr
I_F = - 50 A, di/dT = 100 A/µs
36
55
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73009
S-71660-Rev. B, 06-Aug-07