SUD50P04-13L_08 Datasheet, PDF (1/6 Pages) Vishay Siliconix – P-Channel 40-V (D-S) 175 °C MOSFET

New Product
SUD50P04-13L
Vishay Siliconix
P-Channel 40-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.013 at V_GS = - 10 V
- 40
0.022 at V_GS = - 4.5 V
TO-252
I_D (A)
- 60^a
- 48
FEATURES
• TrenchFET^® Power MOSFET
• 175 °C Junction Temperature
S
RoHS
COMPLIANT
G
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD50P04-13L-E3 (Lead (Pb)-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current^b
T_C = 25 °C
T_C = 100 °C
I_D
Pulsed Drain Current
I_DM
Continuous Source Current (Diode Conduction)
I_S
Avalanche Current
Avalanche Energy,
I_AS
L = 0.1 mH
E_AS
Maximum Power Dissipation^b
T_C = 25 °C
T_A = 25 °C
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
Limit
- 40
± 20
- 60^c
- 43
- 100
- 60^c
- 40
80
93.7^b
3^a
- 55 to 175
Unit
V
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^a
t ≤ 10 sec
Steady State
R_thJA
Maximum Junction-to-Case (Drain)
R_thJC
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See SOA curve for voltage derating.
b. Calculated based on maximum allowed Junction Temperature. Package limitation current is 50 A.
Typical
15
40
1.3
Maximum
18
50
1.8
Unit
°C/W
Document Number: 73009
S-71660-Rev. B, 06-Aug-07
www.vishay.com
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