SUB45N03-13L Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S), 175C MOSFET

SUB45N03-13L
Vishay Siliconix
MOSFET SPECIFICATIONS (T_J =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Drain-Source Breakdown Voltage
V_(BR)DSS
V_GS = 0 V, I_D = 250 mA
30
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_DS = 250 mA
1
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = "20 V
V_DS = 30 V, V_GS = 0 V
Zero Gate Voltage Drain Current
On-State Drain Current^a
I_DSS
I_D(on)
V_DS = 30 V, V_GS = 0 V, T_J = 125_C
V_DS = 30 V, V_GS = 0 V, T_J = 175_C
V_DS = 5 V, V_GS = 10 V
45
V_GS = 10 V, I_D = 45 A
Drain-Source On-State Resistance^a
r_DS(on)
V_GS = 10 V, I_D = 45 A, T_J = 125_C
V_GS = 10 V, I_D = 45 A, T_J = 175_C
V_GS = 4.5 V, I_D = 20 A
Forward Transconductance^a
g_fs
V_DS = 15 V, I_D = 45 A
20
Dynamic^b
Input Capacitance
C_iss
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge^c
Gate-Source Charge^c
Gate-Drain Charge^c
Turn-On Delay Time^c
Rise Time^c
Turn-Off Delay Time^c
Fall Time^c
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
V_DS = 15 V, V_GS = 10 V, I_D = 45 A
V_DD = 15 V, R_L = 0.33 W
I_D ] 45 A, V_GEN = 10 V, R_G = 2.5 W
Source-Drain Diode Ratings and Characteristics (T_C = 25_C)^b
Continuous Current
Pulsed Current
Forward Voltage^a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I_s
I_SM
V_SD
t_rr
I_RM(REC)
Q_rr
I_F = 45 A, V_GS = 0 V
I_F = 45 A, di/dt = 100 A/ms
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
e. Guaranteed by design, not subject to production testing.
b. Independent of operating temperature.
Typ Max Unit
V
3
"100
nA
1
50
mA
150
A
0.009 0.013
0.013 0.02
W
0.02 0.026
0.0145 0.02
S
2000
370
pF
180
40
70
7.5
nC
8
11
20
9
20
ns
38
70
11
20
45
A
100
1
1.3
V
35
70
ns
1.7
A
0.03
mC
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2
Document Number: 71740
S-05010—Rev. G, 05-Nov-01