SUB45N03-13L Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S), 175C MOSFET

SUB45N03-13L
Vishay Siliconix
N-Channel 30-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V_(BR)DSS (V)
30
r_DS(on) (W)
0.013 @ V_GS = 10 V
0.02 @ V_GS = 4.5 V
I_D (A)
45^a
45^a
FEATURES
D TrenchFETr Power MOSFETS
D 175_C Junction Temperature
TO-263
G DS
Top View
SUB45N03-13L
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy^b
Maximum Power Dissipation^b
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 125_C
L = 0.1 mH
T_C = 25_C
T_A = 25_C^d
V_DS
V_GS
I_D
I_DM
I_AR
E_AR
P_D
T_J, T_stg
30
"20
45^a
34^a
100
45
100
88^c
3.75
- 55 to 175
THERMAL RESISTANCE RATINGS
Junction-to-Ambient
Junction-to-Case (Drain)
Parameter
PCB Mount^d
Symbol
R_thJA
R_thJC
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 71740
S-05010—Rev. G, 05-Nov-01
Limit
40
1.7
Unit
V
A
mJ
W
_C
Unit
_C/W
www.vishay.com
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